发明名称 |
Semiconductor device manufacturing method and ion implanter used therein |
摘要 |
Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.
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申请公布号 |
US2006163498(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050204050 |
申请日期 |
2005.08.16 |
申请人 |
YONEDA KENJI;NIWAYAMA MASAHIKO |
发明人 |
YONEDA KENJI;NIWAYAMA MASAHIKO |
分类号 |
H01L21/265;H01J37/317 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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