| 摘要 |
The invention relates to a gate drive circuit for, and in combination with, an insulated gate power transistor. The drive circuit is connected to the gate terminal of the transistor for the purpose of supplying a gate drive signal and being combined with the power transistor in the same chip housing. The drive circuit is set up to carry out a test mode which has been adapted for the purpose of testing the quality of the gate oxide of the power transistor.
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