| 摘要 |
An ion implantation cooling system at least comprises a semiconductor substrate utilized as the ion implantation substrate, a Pelier thermoelectric pump connected with the semiconductor substrate for heat irradiation during the ion implantation, and a heatsink connected to the Pelier thermoelectric pump for heat irradiation from a hot Pelier surface during the ion implantation. The cooling system is to employ the Pelier thermoelectric pump enabling the semiconductor substrate and the semiconductor substrate surface being at a temperature lower than that of the heatsink, so the object of proceeding ion implanting at a lower temperature can be achieved thereby.
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