发明名称 |
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks |
摘要 |
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.
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申请公布号 |
US2006163630(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050034597 |
申请日期 |
2005.01.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CALLEGARI ALESSANDRO C.;GRIBELYUK MICHAEL A.;LACEY DIANNE L.;MCFEELY FENTON R.;SAENGER KATHERINE L.;ZAFAR SUFI |
分类号 |
H01L29/94;H01L29/76;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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