| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide semiconductor light emitting element ensuring higher power converting efficiency and having improved light extracting efficiency from the light emitting surface, and also to provide manufacturing method of the same. <P>SOLUTION: The semiconductor light emitting element comprises a multilayer film 10 including an active layer and having a slab structure, a two-dimensional photonic crystal 11 provided on the first principal surface of the multilayer film 10, a p-electrode 2 having higher reflectivity provided on the second principal surface of the multilayer film 10, and an n-electrode 9 provided on the principal surface of the two-dimensional photonic crystal 11. The multilayer film 10 is separated into a plurality of regions in the horizontal plane. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
