| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for achieving face light emission with higher light extraction efficiency and light density from a light extraction surface. <P>SOLUTION: The semiconductor light-emitting element has a laminated semiconductor structure section 4, comprising at least a first-conductivity-type first cladding layer 1, an active layer 2, and a second-conductivity-type second cladding layer 3. In this case, the outer-periphery surface 4s of the laminated semiconductor structure section 4 is formed in a curved surface shape convexly curved or bent toward outside for the lamination direction. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
