| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a high efficiency by taking harmonics matching within a matching circuit substrate, and, moreover, to provide a semiconductor device which can suppress leakage of that harmonic waves by performing approximate total reflection of the harmonic waves. <P>SOLUTION: At least one wiring region which is caused substrate splitting cut 7 and parted has at least one region 6 in which wiring is not formed in a U shape as seen in plane, and the dimensionality of the lengthwise direction of the wiring with which three way sides are surrounded by the region 6 is set as the dimensionality from which the impedance of the harmonic waves becomes short. The dimensionality can be made substantially equal values to 1/(4n) wavelength of n-th (n is an integer) harmonic waves. Both the ends of the region 6 are desirable to be arranged at the nearer side at an FET 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
