发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To suppress the increase of noise and effective inductance even if a circuit through which signal passes is lengthened because the front surface and backside of a substrate are conducted through through holes in a substrate-type BGA. SOLUTION: A semiconductor device comprises a semiconductor device 2 mounted on the die pad section 1 of a lead frame, a metal thin wire 4 that is electrically connected, and a sealing resin 5 that seals a region of the semiconductor device 2. An opening 10 is configured by removing the resin 5 from a part of the lower surface in an inner lead section 3, the lower surface of the section 3 is exposed, and external terminals 11 are provided in the shape of an array on the lower surface of the section 3 through the opening 10. This configuration enables the BGA type semiconductor device comprising the lead frame in place of the BGA type semiconductor device using the substrate, and allows the semiconductor device to be manufactured without increasing effective inductance and cost. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196930(A) 申请公布日期 2006.07.27
申请号 JP20060114188 申请日期 2006.04.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUNAKOSHI MASAJI;YAMAGUCHI YUKIO
分类号 H01L23/12;H01L23/50 主分类号 H01L23/12
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