发明名称 CONTROLLER FOR VOLTAGE DRIVE TYPE SEMICONDUCTOR SWITCHING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a controller for voltage drive type semiconductor switching elements wherein there is no possibility that a capacitor in a gate drive circuit or a power supply circuit is broken down by overvoltage, even when an inverter is in operation and a voltage dividing resistor only has to have low capability to withstand power. SOLUTION: The controller includes multiple IGBTs 31 that are connected in series and constitute a main circuit, the gate drive circuit 32 that supplies gate signals to the gates of the IGBTs 31, the power supply circuit 33 that is connected in parallel between the terminals of the IGBTs 31, and supplies power from the main circuit to the gate drive circuit 32, and a capacitor 37 that is provided in the power supply circuit 33 and stores power supplied from the main circuit through a first voltage dividing resistor 34. The power supply circuit 33 is provided with a second voltage dividing resistor 35 and a diode 36 for reverse current prevention in series between the first voltage dividing resistor 34 and the capacitor 37. A switch 39 is provided in parallel with the second voltage dividing resistor 35, and an overvoltage detector 38 is provided in parallel between the terminals of the capacitor 37. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006197763(A) 申请公布日期 2006.07.27
申请号 JP20050008710 申请日期 2005.01.17
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEM CORP 发明人 TAKAO KENJI
分类号 H02M1/00;H02M1/08 主分类号 H02M1/00
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