| 摘要 |
PROBLEM TO BE SOLVED: To reduce a confused distribution of dislocations from a dislocation set section at the center of a V-groove (valley) composed of a facet side, to annihilate the surface defects of the dislocation set section at the center of the V-groove (valley) composed of the facet side, and to control the position of the dislocation set section, at the center of the V-groove (valley) composed of the facet side. SOLUTION: A stripe mask pattern is provided in regular form, on a ground substrate, and a straight V-groove (valley) composed of the facet is formed thereon. While this is maintained, GaN is made to grow a facet, and a defective set region H is formed at the bottom of the V-groove (valley) composed of the facet side. Dislocations there are collected, and the surrounding low defective single-crystal region Z and C-surface growth region Y is made to have low dislocation. COPYRIGHT: (C)2006,JPO&NCIPI
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