| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing apparatus for cutting a workpiece such as a silicon ingot with the use of a plasma electrode that is hard to break. SOLUTION: In a plasma processing apparatus 100, a high frequency is applied between a ribbon-like electrode 10 and a silicon ingot 20 that is a workpiece under the existence of SF<SB>6</SB>in a reaction chamber 101 to generate a fluorine radical. The silicon ingot 20 is gradually etched by the fluorine radical generated in the vicinity of the side 10a of the ribbon-like electrode 10 having a thickness of 20μm or smaller. By gradually moving the silicon ingot 20 upward by a ramp 40, the silicon ingot 20 is cut with a kerf loss of 50μm or smaller, and a wafer is obtained. The ribbon-like electrode 10 is gripped by rollers 31 and 32, and the rollers 31 and 32 are rotated in the same direction. Then, the ribbon-like electrode 10 is run from the left to the right of a drawing, so as to suppress the wear of the ribbon-like electrode 10. COPYRIGHT: (C)2006,JPO&NCIPI
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