JUNCTION FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD THEREOF, AND SOLID-STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a junction field effect transistor whose gate breakdown strength is high, with less variation in element characteristics. SOLUTION: An n++source region 3 and drain region 4 are provided with a p+gate region 2 in-between. An n-type channel region 5 is provided under the gate region 2. A p-type back gate region is provided under the channel region 5 and is electrically connected to the gate region 2. The channel region 5 comprises an n-type first channel region 5a on the side of the source region 3, a third channel region 5c on the side of the drain region 4, and a second channel region 5b between the first and third channel regions 5a and 5c. The impurity concentration n1 of the first channel region 5a is substantially identical with impurity concentration n3 of the start channel region 5c, and is higher than the impurity concentration n2 of the second channel region 5b. COPYRIGHT: (C)2006,JPO&NCIPI