SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To suppress the distribution of an extended diffusion layer in the channel direction upon the formation of the extended diffusion layer by preventing an ion-implanted impurity from penetrating an offset sidewall. SOLUTION: This semiconductor device comprises a gate electrode 3 formed on a semiconductor substrate 1 and the offset sidewall 5 selectively formed on the side face of the gate electrode 3, and a silicon nitride oxide film is formed by nitriding a silicon oxide film in the surface portion of the offset sidewall 5. COPYRIGHT: (C)2006,JPO&NCIPI