| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor for an imaging system. SOLUTION: An annular thin film transistor 60 comprises an annular source electrode 62 arranged on the upside of a layer 66 of a semiconductor material, a drain electrode 64 arranged on the upside of the layer of the semiconductor material and inside the annular source electrode, and an active channel 76 arranged between the drain electrode and annular source electrode. The surface of the active channel includes the exposed semiconductor material. A meandering-shaped thin film transistor 78 comprises a meandering-shaped source electrode 80 arranged on the upside of a layer 82 of a semiconductor material, a drain electrode 84 that is arranged on the upside of the layer of the semiconductor material and substantially inside a recessed part formed by the meandering-shaped source electrode and is constituted so as to substantially match with the recessed part, and an active channel 98 arranged between the drain electrode and meandering-shaped source electrode. The active channel has a substantially constant length, and the surface of the active channel includes the exposed semiconductor material. COPYRIGHT: (C)2006,JPO&NCIPI
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