| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem that there is an interfacial trap in an interface with an oxide film surrounding a PN-junction diode, and a noise is generated by generation and recombination of conductive carriers in an infrared solid imaging apparatus for sensing infrared rays using the conventional PN-junction diode. SOLUTION: The infrared solid imaging apparatus has a distribution of a dopant concentration in a semiconductor layer for constituting the PN-junction diode. The conductive carriers flow the semiconductor layer, and are unevenly distributed in the center rather than the periphery of the semiconductor layer. The generation and recombination of the conductive carriers are reduced in the interface between the semiconductor layer and the peripheral semiconductor/oxide film, and the noise is reduced in the PN-junction diode. COPYRIGHT: (C)2006,JPO&NCIPI
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