METHOD FOR FORMING SINGLE-CRYSTAL SILICON THIN FILM AND METHOD FOR FORMING THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a high-quality thin-film transistor channel region by utilizing a patterned metal mask and a grain boundary filter region for forming a large-scale single-crystal silicon thin film. SOLUTION: The method for forming the signal-crystal silicon thin film includes a process for forming a first silicon region 41 in which an amorphous silicon layer is patterned and crystallization starts, a second silicon region 42 that is positioned at the center of one side of the first one 41 and is narrower than the first one 41, and a third silicon region 43 that is in contact with the second one 42 and is wider than the second one 42; a process for partially forming the metal mask 34 on the first silicon region 41; and a process for irradiating the patterned amorphous silicon layer with laser beams and entirely fusing the remaining amorphous silicon layer except amorphous silicon at the lower section of the metal mask 34 for cooling. COPYRIGHT: (C)2006,JPO&NCIPI