| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-wavelength semiconductor laser device provided with a plurality of semiconductor lasers having different wavelengths and provided with an outgoing end coating film suitable for obtaining high output characteristics. SOLUTION: A red semiconductor laser 1 and an infrared semiconductor laser 2 share a semiconductor substrate 101 to form a multi-wavelength semiconductor laser device 100. The outgoing end coating film 170 formed on the surface extracting the light propagated through active layers 104 and 124 of the end faces of a resonator body 160 is a dielectric single layer film with a predetermined refractive index (n) (1.45≤n≤1.6 or 2.05≤n≤2.25), and has a predetermined film thickness t (λ1/(4n)×m≤t≤λ2/(4n)×m, wherein (m) is a natural number). COPYRIGHT: (C)2006,JPO&NCIPI
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