| 摘要 |
PROBLEM TO BE SOLVED: To provide a high output semiconductor laser element where an active layer is sufficiently made into mixed crystal, a window structure is formed and there is little deterioration of an element characteristic. SOLUTION: An n-type cladding layer 4, an active layer 5, a first p-type clad 6, and a p-type etching stop layer 7, are sequentially laminated on a surface of an n-type compound semiconductor substrate 2. A ridge 10 of a trapezoidal shape, in which a second p-type clad 8 and a p-type cap layer 9 are laminated, is formed on a part of the surface of the p-type etching stop layer 7. N-type current constriction layers 11 and 11 are formed so that they sandwich the ridge 10. In the semiconductor laser element 1, a p-type contact layer 12 is laminated on them. An optical separation layer 16 and an n-type high concentration layer 15 are arranged below the n-type clad layer 4. COPYRIGHT: (C)2006,JPO&NCIPI
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