Nonvolatile memory device with curved floating gate and method of fabricating the same

摘要

Disclosed is a nonvolatile memory device comprising: a tunnel oxide layer on a semiconductor substrate; a floating gate on the tunnel oxide layer; a gate interlevel insulation layer on the floating gate layer; a control gate on the gate interlevel insulation layer; a source region at a side of the floating gate in the semiconductor substrate; and a drain region at the other side of the floating gate in the semiconductor substrate. The floating gate comprises a first side adjacent to the source region and a second side adjacent to the wordline and not to the source region. The first face is curved.