PATTERN CORRECTION METHOD, PATTERN CORRECTION SYSTEM, PATTERN CORRECTION PROGRAM, METHOD FOR PRODUCING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern correction method, a pattern correction system and a pattern correction program capable of improving the efficiency of data processing by examining a data producing technique so as to permit a high-precision mask used as a technique for suppressing such interference factors as distance between neighboring patterns and etching in order to obtain figures as designed and, concretely, by suppressing a time and a data amount required for the correction irrespective of the distance between neighboring patterns.

SOLUTION: Layer alteration is performed by adding a correction amount of an object pattern to be corrected and the surrounding information to design data having a clear hierarchy before mask data creation (conversion). After the processing, a batch operation combining the surrounding information is performed and the retrieval of small regions and high-precision and high-speed mask data conversion by means of a small data amount is permitted.

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