发明名称 VOLTAGE SWITCH CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a small voltage switch circuit which can operate with a low supply voltage and can be manufactured through simple steps. <P>SOLUTION: A D-type N-channel MOS transistor HND3, an I-type N-channel MOS transistor HN1, and an E-type N-channel MOS transistor HNE1 are connected in parallel between node N2 and node N3. The transistor HNE1 makes the transistor LP nonconductive by short-circuiting nodes N2 and N3 when the input voltage INPUT is the reference voltage Vss. The transistors HNI and HNE1 keep the potential difference constant between nodes N2 and N3 when their output voltages OUTPUT rise/drop. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006196061(A) 申请公布日期 2006.07.27
申请号 JP20050005070 申请日期 2005.01.12
申请人 TOSHIBA CORP 发明人 FUTAYAMA TAKUYA;TAKEUCHI TAKESHI
分类号 G11C16/06;G11C16/04 主分类号 G11C16/06
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