| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be manufactured at lower costs by reducing the operating power required. SOLUTION: A semiconductor laser device 100 consists of a negative electrode 113, a GaN substrate 101, a first n-type cladding layer 102, an n-type light blocking layer 103 that blocks light, a second n-type cladding layer 104, an n-type optical waveguide layer 105, a first carrier stop layer 106, an active layer 107, a second carrier stop layer 108, a p-type optical waveguide layer 109, a p-type cladding layer 110, a p-type contact layer 111, and a positive electrode 112 laid in the described order. COPYRIGHT: (C)2006,JPO&NCIPI
|
