发明名称 METHOD OF MANUFACTURING SUBSTRATE HAVING CONDUCTIVE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the method of forming a substrate which has a conductive layer capable of controlling a space between adjacent conductive layers, which is capable of controlling the width and the thickness of the conductive layer, and which has the thick conductive layer whose width is small in particular. SOLUTION: The method of manufacturing a substrate 100 having a conductive layer forms the conductive layer 121 by forming an inorganic insulating layer 101 on a substrate, forming an organic resin layer having a desired profile on the inorganic insulating layer 101, forming a layer 102 in which the wetness of a composition having a conductive particle is low on the first exposed portion of the inorganic insulating layer, removing the organic resin layer, and then applying and calcinating the composition having the conductive particle on the second exposed portion of the inorganic insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196883(A) 申请公布日期 2006.07.27
申请号 JP20050361964 申请日期 2005.12.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJII ITSUKI;MORISUE MASAFUMI;SHOJI HIRONOBU;MARUYAMA JUNYA;ORIKI KOJI;AOKI TOMOYUKI
分类号 H01F41/04;H01L21/3205 主分类号 H01F41/04
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