| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which serves as an RF switch having low distortions and low loss, by forming an electrode for applying positive voltage in the element isolation region. SOLUTION: In a semiconductor device 1, a field effect transistor 5, utilizing heterojunction is formed on an element forming area sectioned by element isolation regions 25 formed on a semiconductor substrate 10 provided with semiconductor layers, including a semiconductor layer having heretojunction and laminated on the semiconductor substrate 10. The element isolation region 25 consists of a layer into which conductive impurity is introduced, and an electrode 28 is formed on the element isolation region 25 for applying positive voltage to the surface of at least a part of the element isolation region 25 on the periphery of the field effect transistor 5. COPYRIGHT: (C)2006,JPO&NCIPI
|
