| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable transistor incorporating a Zener diode, and to provide a method for manufacturing the transistor. SOLUTION: The transistor comprises a lightly-doped n-type epitaxial layer 2; a p-type semiconductor base layer 3; a heavily-doped n-type semiconductor emitter layer 4; a heavily-doped n-type semiconductor contact layer 5; a high-concentration n-type semiconductor cathode layer 6, and wiring 7. The heavily-doped n-type semiconductor cathode layer 6 is extended from the surface of the p-type semiconductor base layer 3 into the layer. The heavily-doped n-type semiconductor cathode layer 6 and the p-type semiconductor base layer 3 compose a Zener diode. The heavily-doped n-type semiconductor cathode layer 6 is connected to the lightly-doped n-type epitaxial layer 2 via the wiring 7 and the heavily-doped n-type semiconductor contact layer 5, thus achieving operation between the collector and base of an original transistor without causing the interface between the p-type semiconductor base layer 3 and the lightly-doped n-type epitaxial layer 2 from being affected by the breakdown of the Zener diode. COPYRIGHT: (C)2006,JPO&NCIPI
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