| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of highly speedily operating with reducing the macro-size small. SOLUTION: The memory uses a nonvolatile semiconductor memory comprising first and second memory cells 10a, 10b. The first memory cells 10a are provided on a semiconductor substrate 1, and the second memory cells 10a are provided on the semiconductor substrate 1 and neighbors each other in the direction of the word lines 2. The first and second memory cells 10a, 10b are on a trap film 4 for trapping charge in charge storage regions, and have a first and second diffusion layers 7, 8 having different heights in the thickness direction of the semiconductor substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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