| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage due to crystal defect in a semiconductor manufacturing process wherein high-voltage MOSFET and low-voltage MOSFET coexist. SOLUTION: First and second active areas 1 and 2 surrounded by an element isolation insulating film 12 are formed in a semiconductor substrate 11. Next, a first thermal oxide film and a first oxide film by chemical vopor deposition are formed on the first and second active areas. A second thermal oxide film is formed on the second active area to form a single-layer insulating layer 13b, and a multilayer insulating film 13a including the first thermal oxide film and the first oxide film is formed on the first active area. Then, a conductive film is formed on the multilayer insulating film and the single-layer insulating film to form gate electrodes 14a and 14b. In this case, the multilayer insulating film is made larger in thickness than the single-layer insulating film, and the first thermal oxide film is formed by rapid thermal oxidation method. COPYRIGHT: (C)2006,JPO&NCIPI
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