| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for a silicon carbide single crystal, whereby the disappearance of a peripheral part of a seed crystal is prevented and a clean surface of the seed crystal is exposed so that crystal growth can be started from the clean surface. SOLUTION: The silicon carbide seed crystal 7 is grafted to the surface of a pedestal part in a reaction vessel 6. A mixed gas containing monosilane and propane is introduced into the reaction vessel 6. In an atmosphere with a temperature gradient wherein the temperature becomes lower toward the downstream part of a gas passageway leading to the seed crystal 7, the mixed gas is delivered to the seed crystal 7 to grow the silicon carbide single crystal 20. A solid silicon carbide 31 is placed near the peripheral part of the seed crystal 7 but not in contact with the seed crystal 7, at a position where the temperature is higher than that at the position of the seed crystal 7. As an SiC component gas sublimed from the solid silicon carbide 31 of a temperature higher than that at the peripheral part of the seed crystal 7 is fed to the peripheral part of the silicon carbide seed crystal 7, an etching gas is fed to the seed crystal 7 to expose the clean surface of the seed crystal 7. Then, crystal growth is started from the clean surface of the seed crystal 7. COPYRIGHT: (C)2006,JPO&NCIPI
|
