| 摘要 |
The invention relates to a semiconductor device (100), comprising at least one first region (6) of amorphous semiconductor, doped by a first type of conductivity, on at least one face (3) of a crystalline semiconductor (1). The semiconductor substrate (1) comprises at least one second region (7a, 7b) of amorphous semiconductor doped with a second type of conductivity, opposed to the first type of conductivity, in the same region (3). The first region (6) of amorphous semiconductor is insulated from the second region (7a, 7b) of amorphous semiconductor by means of at least one dielectric region (8a, 8b, 8c, 8d) in contact with the semiconductor substrate (1) and the second region (7a, 7b) of amorphous semiconductor forms an inter-finger structure. |
