SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided with a semiconductor substrate (200); ONO films (210, 212, 216) formed on the semiconductor substrate; a control gate (280) on the ONO films; first low resistance layers (250); and second low resistance layers (252) which are brought into contact with the first low resistance layers and are consecutively formed in a current flowing direction. The second low resistance layers have a smaller sheet resistance than that of the first low resistance layers. Thus, the semiconductor device wherein resistance of a bit line is prevented from becoming high, a memory cell can be microminiaturized, and the peripheral circuit manufacturing process is easy, and a method for manufacturing such semiconductor device are provided.