| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and its data reading method with which spread of distribution of threshold voltage of memory cells due to temperature change can be suppressed and a data storage property can be improved. <P>SOLUTION: The nonvolatile semiconductor memory device is provided with memory cell array 21, read circuits 22, 23, 23, 25, 26. 27, write circuits 22, 23, 23, 25, 26, 27, a read voltage generating circuit 29, a memory circuit 34, and a switching circuit 35. The read voltage generating circuit generates read voltage and supplies it to the read circuit. The memory circuit stores information for varying temperature properties of the memory cell in the memory cell array. The switching circuit switches temperature dependency of read voltage generated by the read voltage generating circuit on the basis of information stored in the memory circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
