发明名称 APPARATUS FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To attain a predetermined magnetic field stably by preventing a magnet from having a high temperature even if it is subjected to radiation heat from a substrate mounting table. SOLUTION: A substrate mounting table is provided in a reaction chamber and a heater for heating the substrate is buried in the substrate mounting table. A tubular electrode 215 is arranged on the outer circumference of the reaction chamber. A magnet 216 is arranged in contact with the outer circumference of the tubular electrode 215. A channel 106 for feeding refrigerant medium is formed in the tubular electrode 215. The wall of the reaction chamber corresponding to at least such parts, where the tubular electrode 215 and the magnet 216 are arranged on the outer circumference, is composed of quarts. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196533(A) 申请公布日期 2006.07.27
申请号 JP20050004122 申请日期 2005.01.11
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SATO TAKAYUKI
分类号 H01L21/205;C23C16/44;H01L21/265;H01L21/3065;H01L21/316 主分类号 H01L21/205
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