发明名称 |
Selective deposition |
摘要 |
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.
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申请公布号 |
US2006166414(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20060378101 |
申请日期 |
2006.03.17 |
申请人 |
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发明人 |
CARLSON DAVID K.;KUPPURAO SATHEESH;SANCHEZ ERROL ANTONIO C.;BECKFORD HOWARD;KIM YIHWAN |
分类号 |
H01L21/84;H01L21/20;H01L21/31;H01L21/336;H01L21/8238 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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