| 摘要 |
The most important task in realizing a downsized and low cost THz band spectroscopic and fluoroscopic instrument is to achieve downsizing and cost reduction of oscillators used in the instrument. A metal base transistor is used for an active element of the oscillator. In order to improve the maximum oscillation frequency of the transistor to several THZ, InN having a high electron saturation velocity or a material mainly composed of InN is used for a collector layer. In order to obtain characteristics with excellent reproducibility, it is useful to insert InGaN into an interface between the collector layer and the base layer. Using the metal base transistor of the present invention makes it possible to constitute an oscillator allowing a THz band oscillation. Further, the present invention provides a spectroscopic instrument applying this oscillator to at least one of a signal source and a local oscillator.
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