| 摘要 |
A test device for a semiconductor memory device includes a clock frequency multiplier, a data input buffer, a test data generator and a data output buffer. The clock frequency multiplier multiplies an external clock signal having a relatively low frequency provided from an external test device to generate an internal clock signal having a relatively high frequency. The data input buffer buffers test pattern data provided in synchronization to the external clock signal to output the buffered test pattern data. The test data generator generates test data that is to be synchronized to the internal clock signal, using the outputted test pattern data based on a first or a second control signal. The data output buffer outputs the generated test data to a memory core of the semiconductor memory device. The test device generates various test data suitable for a memory test at a high operating speed.
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