发明名称 |
Mixing energized and non-energized gases for silicon nitride deposition |
摘要 |
A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.
|
申请公布号 |
US2006162661(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050040712 |
申请日期 |
2005.01.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
JUNG KEE B.;DU BOIS DALE R.;TSUEI LUN;HUANG LIHUA L.;SEAMONS MARTIN J.;SEN SOOVO;ARGHAVANI REZA;KWAN MICHAEL C. |
分类号 |
H05H1/24;B08B6/00;C23C16/00;C23F1/00;H01L21/306 |
主分类号 |
H05H1/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|