III/V Semiconductor, useful to prepare e.g. luminescence diode, vertical external cavity surface emitting laser diode, modulator structure or detector structure, comprises a semiconducting metal composition

摘要

III/V Semiconductor comprises a semiconducting metal composition. III/V Semiconductor comprises a semiconducting metal composition of formula (GaxInyNaAsbPcSbd), where the ratio of sum of x and y and a-d amounts to 1:1. x : 70-100 mol.%; y : 0-30 mol.%; a : 0.5-15 mol.%; b : 67.5-99.5 mol.%; c : 0-39.5 mol.%; and d : 0-15 mol.%. Where the sum of x and y amounts to 100 mol.%; and the sum of a, b, c and d amounts to 100 mol.%. Independent claims are included for: (1) a monolithic integrated semiconductor structure comprising a substrate layer (i) based on doped or undoped silicon (Si) or gallium-phosphorus (GaP), optionally a first energized layer (ii) of doped Si, doped GaP or doped aluminum gallium-phosphorus ((AlGa)P), optionally a first adjustment layer (iii) and an optically active element (iv) containing one semiconductor layer; (2) a preparation of semiconductor layer comprising bringing a substrate based on doped or undoped Si or GaP into metal organic gas phase epitaxy equipment; providing a epitaxic coating optionally on a surface of the substrate with at least an adjustment layer, a barrier layer, an energized layer, transverse electromagnetic wave layer and/or a reflection structure; supplying an inert feed gas with the reactant in defined concentrations; and conducting the supplied feed gas on the substrate surface and heating at 300-700[deg]C and/or exposing the upper layer of the substrate layer to a defined temperature, where total concentration of the reactant and exposition duration is calculated under the condition that the semiconductor layer with a given layer thickness is formed as epitaxic structure on the substrate surface and/or upper layer of the substrate surface; (3) the preparation of monolithic integrated semiconductor structure comprising forming a substrate layer based on doped or undoped Si or Gap; epitaxially forming optionally a first energized layer of doped Si, undoped Gap or undoped (AlGa)P; optionally epitaxially forming a first adjustment layer, and epitaxially forming a multi layer structure, in which an optically active element containing a semiconductor layer; (4) semiconductor layer, obtained by the above process; and (5) integrated monolithic semiconductor structure, obtained by the above method.