| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing halftone phase shift mask approximating the dimensional accuracy of a phase shift layer pattern of a halftone phase shift mask which has a light shielding part partially formed in a light semi-transmitting part to design dimension and capable of manufacturing a non-defective article without depending on a technique of correcting a defect itself. <P>SOLUTION: The method for manufacturing halftone phase shift mask is composed of the following processes: (1) laminating a phase shift layer, a thin film metal layer and a first resist layer; (2), (3), (4) forming a first resist layer pattern, a thin film metal layer first pattern 8b and a phase shift layer pattern 3b, respectively; (5) peeling the first resist layer pattern; processes (6), (7), (8), (9) forming a light shielding layer 9a on the whole surface other than an alignment mark light transmission part, a second resist layer 6a, a second resist layer pattern 6b, and a light shielding layer pattern 9b and a thin film metal layer second pattern 8c, respectively; and peeling the second resist layer pattern 6b. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
