| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for measuring a numerical aperture of a projected optical system of an exposure apparatus without necessity of deassembling and high precision adjustment of the exposure apparatus. <P>SOLUTION: First, a plurality of basic patterns of a first optical unit 31 are exposed to a wafer 5 under the defocusing state, and change is measured in residual amount of film of the resist on the wafer 5 in the exposed pattern region. Thereafter, the numerical aperture of the projected optical system 4 is obtained by acquiring the pitch size of the first optical unit 31 which becomes the inflexion point of the measured values. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
