| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory device capable of recovering any damage caused by hot hole injection even when writing and erasing are repeated, and capable of preventing characteristics of a writing state and an erasing state from being deteriorated. <P>SOLUTION: In accordance with the semiconductor nonvolatile memory device, it is possible to eliminate an increase of trap levels in a first insulating film 7 produced owing to the repetition of rewriting and erasing of data and an increase of interface levels at an interface of the insulating films, by permitting a resistor 13 constituting an anneal part to perform annealing processing to a semiconductor nonvolatile memory M1. Consequently, it is possible to recover any damage caused by hot hole injection by providing the resistor 13 constituting the annealing part even when the writing and erasing are repeated. It is thus possible to prevent characteristics of the writing state and erasing state from being deteriorated. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
