发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device which can form a structure such as wiring constituting the semiconductor device, a display unit, and the like in a desired profile with a sufficient adhesiveness, which shows a small loss of a material, and which can attain a cost reduction. SOLUTION: A layer having a rough surface is formed. A region whose wettability to a composition comprising a conductive material is low and a region whose wettability to the composition is high are formed on the rough surface. A conductive layer is formed on the region whose wettability is high using the composition. Since it is possible to form a region whose wettability is largely different (a region having large difference in wettability), a liquid conductive material or an insulating material is correctly adhered only to the formed region. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196879(A) 申请公布日期 2006.07.27
申请号 JP20050355668 申请日期 2005.12.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MORISUE MASAFUMI;MAEKAWA SHINJI
分类号 H01L21/3205;H01L21/288;H01L21/336;H01L29/786;H01L51/05;H01L51/50 主分类号 H01L21/3205
代理机构 代理人
主权项
地址