VERTICAL GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide a vertical gate semiconductor device and a method for manufacturing it capable of reducing in size without increasing the contact resistance in a source region. SOLUTION: A first region 11 that functions as a transistor has a drain region 111, a body region 112 formed on the upper side of the drain region 111, a source region 113A formed on the upper side of the body region 112, and a trench formed in the body region 112 and in which a gate electrode 120 is embedded. A source region 113B is formed on the upper side of the body region 112 extending to a second region 12. The source regions 113A and 113B constituting the upper edge part of the trench are formed into a roundish shape. COPYRIGHT: (C)2006,JPO&NCIPI