| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can improve the dimensionality controllability of a pattern. SOLUTION: An insulating film 33 is formed in a termination formation region 5, and a mask material 47 is formed over the insulating film 33 and a cell formation region 3. A resist 49 overlying the mask material 47 is formed. A resist pattern 53 for gates corresponding to a trench gate pattern is formed at the resist 49 of the cell formation region 3, and a dummy resist pattern 55 is formed in the resist 49 of the termination formation region 5. COPYRIGHT: (C)2006,JPO&NCIPI
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