| 发明名称 |
Multi-transistor memory cells |
| 摘要 |
A memory cell having three transistors and a capacitor having metallic electrodes is described. Multiple memory cells may be arranged in a memory unit or array. Collective electrodes may be used in a space-saving embodiment of the capacitor.
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| 申请公布号 |
US2006164876(A1) |
申请公布日期 |
2006.07.27 |
| 申请号 |
US20060387490 |
申请日期 |
2006.03.23 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BARTH HANS-JOACHIM;OLBRICH ALEXANDER;OSTERMAYR MARTIN;SCHRUFER KLAUS |
| 分类号 |
G11C27/00;G11C11/405;H01L21/8242;H01L21/8244;H01L27/108;H01L27/11 |
主分类号 |
G11C27/00 |
| 代理机构 |
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