METHOD FOR THE SELF-LIMITED DEPOSITION OF ONE OR MORE MONOLAYERS AND CORRESPONDING SUITABLE STARTING MATERIAL

摘要

The invention relates to a method for depositing at least one layer that contains at least one first component onto at least one substrate in a process chamber. According to said method, first and second starting materials are introduced into the process chamber in gaseous form and in a cyclically alternating manner, at least the first starting material containing the first component, and substantially one layer only of the first component is deposited in every cycle. The number of suitable starting materials is increased by supplying a limiter to the process chamber at the same time or temporally offset in relation to the first starting material in such a manner that deposition of the first component onto the substrate automatically stops when the first layer is finished.