发明名称 |
SILICIDE CAP STRUCTURE AND PROCESS FOR REDUCED STRESS AND IMPROVED GATE SHEET RESISTANCE |
摘要 |
A suicide cap structure and method of fabricating a suicide cap having a low sheet resistance. The method provides a semiconductor substrate and a MOSFET structure comprising a gate insulator on the substrate, an Si-containing gate electrode on the gate insulator layer, and source/drain diffusions. Atop the gate electrode and source/drain diffusions is formed a layer of metal used in forming a silicide region atop the transistor gate electrode and diffusions; an intermediate metal barrier layer formed atop the silicide forming metal layer; and, an oxygen barrier layer formed atop the intermediate metal barrier layer. As a result of annealing the MOSFET structure, resulting formed silicide regions exhibit a lower sheet resistance. As the intermediate metal barrier layer comprises a material exhibiting tensile stress, the oxygen barrier layer may comprise a compressive material for minimizing a total mechanical stress of the cap structure and underlying layers during the applied anneal.
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申请公布号 |
US2006163671(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050905949 |
申请日期 |
2005.01.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GULARI LEVENT;MELLO KEVIN E.;PURTELL ROBERT J.;WANG YUN-YU;WONG KEITH K. |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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