| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems wherein conventionally, improvements in the characteristics of an active layer are required and improvement of the lifetime of an element and the characteristics of electrostatic breakdown voltage is required in a nitride semiconductor element, even though an n-type nitride semiconductor and a nitride semiconductor comprising n-type impurities, etc. are used as an active layer of a quantum well structure, in a nitride semiconductor element. <P>SOLUTION: As the active layer 12 sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13, at least a barrier layer 2a having n-type impurities, a well layer 1a comprising the nitride semiconductor including In and a barrier layer 2c which has p-type impurities or is grown by undoping are provided, and by arranging the barrier layer 2 as a barrier layer closest to the p-type layer side, appropriate carrier implantation to the active layer 12 is made possible. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
