| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the structure of a GaN series light emitting element which can improve a light extraction efficiency and, further, can improve a heat dissipation, and to provide its manufacturing method. <P>SOLUTION: Surface roughening is given to the principal surface Ax of a basic substrate A to provide, a recess and protrusion surface having a recess bottom surface A1 and a protrusion top surface A2 partitioned with a level difference, and unit crystals 1a and 1b are separately grown up from the above recess bottom surface A1 and the protrusion top surface A2. They are made to unite mutually and it is made as a GaN series crystal layer 1. Furthermore on it, a laminate S including a light emitting layer 2 is formed, the basic substrate is partially removed from a rear surface side, and only the protrusion of the basic substrate or the protrusion and a part with a λ/4 thickness or thinner from the bottom of the recess are left into the light emitting element. The λ is the wavelength of this light at the time of light emitted from the light emitting layer passing basic substrate. Consequently, the residual part is utilized for light scattering. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
