发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To realize reduction in radiation noise and prevention of malfunction by suppressing noise propagation between an input/output circuit and an inner circuit while preventing or keeping the number of processes of a semiconductor device design from increasing or to a minimum. <P>SOLUTION: A semiconductor device having an input/output circuit region and an inner circuit region 102 comprises an inner circuit power cell 104 arranged in the input/output circuit region and supplying power to the inner circuit region, an inner circuit ground cell 105 arranged in the input/output circuit region and supplying a ground to the inner circuit region, and a noise countermeasure cell 108 arranged so as to sandwich the inner circuit power cell and the inner circuit ground cell in the input/output circuit region and configured such that a p-type semiconductor substrate is electrically connected to a ground independent of the input/output circuit region and the inner circuit region. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196875(A) 申请公布日期 2006.07.27
申请号 JP20050347939 申请日期 2005.12.01
申请人 CANON INC 发明人 HOSHI SATOSHI
分类号 H01L27/04;H01L21/82;H01L21/822 主分类号 H01L27/04
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