| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the operating method of a phase change RAM, capable of enhancing the degree of integration by significantly reducing resetting current. <P>SOLUTION: The operating method of PRAM equipped with a switching device 42 and storage node 40 having a phase change layer 40c comprises a step of changing the part of the phase change layer 40c into amorphous state, by impressing resetting current with smaller than 1.6 mA that passes from the lower end to the higher end of the phase change layer 40c to the storage node 40, and second step of impressing setting current in the direction opposite to the reset current, to the storage node 40. As a result, the degree of integration of the PRAM can be enhanced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
